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S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector

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S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector

Name: S7686 IR Photoelectric Sensor 550 nm Beam Photoelectric Infrared Detector
Brand: Hamamatsu
Price: 1 USD

China S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector wholesale

Brand Name : Hamamatsu

Model Number : S7686

Place of Origin : Japan

MOQ : 1

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 911/pcs/pre

Delivery Time : 3-5work days

Packaging Details : Tubes of

photographic area is : 2.8 × 2.4 mm

Number of pixels : 1

Refrigeration and : Non - cooled

Encapsulated : Ceramic

Encapsulate type : With Filter (CIE)

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Product Description:

S7686 Silicon Photodiode Is Used To Measure Sensitivity Close To Spectral Luminescence Efficiency

Features:

S7686 is a silicon photodiode whose spectral response characteristics are closer to the sensitivity (spectral luminescence efficiency) of the human eye than traditional visible light compensation sensors (S1133, etc.).

The spectral response is similar to CIE spectral luminescence efficiency

Ceramic package, high reliability

Photographic area: 2.4 × 2.8mm

High speed response: 0.5 US (VR=0 V, RL=1 kω)

Fs value: 8% typical value (vertical light incidence)

Rise time (typical value). 0.5 u s

Junction capacitance (typical value) 200 pF

Measurement condition TYP.TA =25 ℃, unless otherwise noted,Photosensitivity: λ=λp, Dark current: VR=1V, Terminal capacitance: VR=0 V, f=10 kHz

Specifications:

Reverse voltage (Max.)	10V
spectral response range is	480 to 660 nm
peak sensitivity wavelength (typical value) was	550 nm
Sensitivity (typical value)	0.38 A/W
Dark current (maximum)	20 pA

S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector

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