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S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

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S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

Name: S12268BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity
Brand: Hamamatsu
Price: 1 USD

China S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity wholesale

Brand Name : Hamamatsu

Model Number : S1226-8BQ

Place of Origin : Japan

MOQ : 1

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 3000/pcs/pre

Delivery Time : 3-5work days

Packaging Details : In a box

Price : Negotiable

photographic area is : 5.8 × 5.8mm

Number of pixels : 1

Refrigeration and : Non - cooled

Encapsulated : Metal

encapsulation type is : TO-8

Reverse voltage (max) : 5V

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Product Description:

S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

Features:

● High UV sensitivity: QE = 75% (λ=200 nm)

● Suppress NIR sensitivity

● Low dark current

● High reliability

Dark current (maximum) 20 pA

Rise time (typical value). 2 mu s

Junction capacitance (typical value) 1200 pF

Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz

Specifications:

Reverse voltage (Max.)	5V
spectral response range is	190 to 1000 nm
peak sensitivity wavelength (typical value) was	720 nm
Type	infrared photoelectricity

S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

Product Tags:

S1226-8BQ Infrared Photoelectric Sensor

Infrared Photoelectric Sensor Precision Photometry

U Type Photoelectric Sensor

S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity Images

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