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S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band

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S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band

Name: S133766BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band
Brand: Hamamatsu
Price: 1 USD

China S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band wholesale

Brand Name : Hamamatsu

Model Number : S1337-66BQ

Place of Origin : Japan

MOQ : 1

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 311/pcs/pre

Delivery Time : 3-5work days

Packaging Details : Tubes of

photographic area is : 5.8 × 5.8mm

Number of pixels : 1

Refrigeration and : Non - cooled

Encapsulated : Ceramic

Reverse voltage (Max.) : 5V

spectral response range is : 190 to 1100 nm

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Product Description:

S1337-66BQ Infrared Silicon Photodiode Is Used For Precise Photometric Determination In Ultraviolet To Infrared Band

Features:

Suitable for precise photometric determination from ultraviolet to infrared band

High UV sensitivity: QE = 75% (λ=200 nm)

Low capacitance

Measurement conditions: Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz

Specifications:

Peak sensitivity wavelength (typical value)	960 nm
Sensitivity (typical value)	0.5 A/W
Dark current (maximum)	100 pA
Rise time (typical value)	1 mu s
Junction capacitance (typical value)	380 pF

S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band

Product Tags:

S1337-66BQ

Infrared Silicon Photodetector

S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band Images

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