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S1227-16BQ Infrared Photoelectric Sensor 190 to 1000 nm For Precise Photometry

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S1227-16BQ Infrared Photoelectric Sensor 190 to 1000 nm For Precise Photometry

Name: S122716BQ Infrared Photoelectric Sensor 190 to 1000 nm For Precise Photometry
Brand: Hamamatsu
Price: 1 USD

China S1227-16BQ Infrared Photoelectric Sensor 190 to 1000 nm For Precise Photometry wholesale

Brand Name : Hamamatsu

Model Number : S1227-16BQ

Place of Origin : Japan

MOQ : 5

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 311/pcs/pre

Delivery Time : 3-5work days

Packaging Details : In a box

photographic area is : 5.9 × 1.1mm

Number of pixels : 1

Refrigeration and : Non - cooled

Encapsulated : Ceramic

Reverse voltage (Max.) : 5V

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Product Description:

S1227-16BQ Silicon Photodiodes Are Used For Precise Photometry From Ultraviolet To Visible Light

Features:

Suitable for UV to visible light, precision photometric determination; Suppression of infrared band sensitivity

Product features

● High UV sensitivity (quartz window type) : QE = 75% (λ=200 nm)

● Inhibition of infrared band sensitivity

● Low dark current

Rise time (typical value). 0.5 u s

Junction capacitance (typical value) 170 pF

Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz

Specifications:

spectral response range is	190 to 1000 nm
peak sensitivity wavelength (typical value) was	720 nm
Sensitivity (typical value)	0.36 A/W
Dark current (maximum)	5 pA

S1227-16BQ Infrared Photoelectric Sensor 190 to 1000 nm For Precise Photometry

Product Tags:

S1227-16BQ Infrared Photoelectric Sensor

Infrared Photoelectric Sensor 1000 nm

S1227-16BQ Infrared Photoelectric Sensor 190 to 1000 nm For Precise Photometry Images

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