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S6931 01 Infrared Photoelectric Sensor Molded Into A Silicon Photodiode

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S6931 01 Infrared Photoelectric Sensor Molded Into A Silicon Photodiode

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Brand Name : YJJ

Model Number : S6931-01

Place of Origin : Japan

MOQ : 5

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 1501/pcs/pre

Delivery Time : 3-5work days

Packaging Details : braid

Receiving surface : 2.4 × 2.8mm

The pixel number is : 1

Packaging : plastics

Heat dissipation : non-cooling type

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S6931 01 Infrared Photoelectric Sensor Molded Into A Silicon Photodiode

S6931-01 Is Molded Into A Silicon Photodiode Enclosed In Transparent Plastic

Features:

Detailed parameter

Receiving surface 2.4 × 2.8mm

The pixel number is 1

Packaging plastics

Cooling non-cooling type

Reverse voltage (Max.) 10 V

Sensitivity wavelength range 320 to 1000 nm

Maximum sensitivity wavelength (typical value) 720 nm

Photosensitivity (typical value) 0.48A /W

Dark current (Max.) 20 pA

Rise time (typical value) 0.5μs

Junction capacitance (typical value) 200 pF

Typical values Ta=25°C, sensitivity: λ = λp, dark current: VR = 1 V, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated

Specifications:

Dark current (Max.) 10V
Operating temperature Topr
Storage temperature Tstg
Center wavelength CWL
Photosensitivity λ=254 nm

S6931 01 Infrared Photoelectric Sensor Molded Into A Silicon PhotodiodeS6931 01 Infrared Photoelectric Sensor Molded Into A Silicon Photodiode


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S6931 01 Infrared Photoelectric Sensor

      

0.5μs Infrared Photoelectric Sensor

      

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